Fig. 2From: Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron BolometerDependence of the bolometer channel resistance on the electron concentration. Dependence of the bolometer channel resistance on the electron concentration in Hg0.32Cd0.68Te/Hg1-xCdxTe/Hg0.32Cd0.68Te QW with the thickness L = 20 nm at T = 77 K, for different molar compositions x Back to article page