Fig. 3From: Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD MethodComparison of the electrical properties of the GaAs NW parallel array FETs fabricated with NWs grown by different techniques. a, c SEM and I DS-V GS curves of devices constructed with NWs grown by the one-source configuration. b, d SEM and I DS-V GS curves of devices configured with NWs grown by the two-source techniqueBack to article page