Fig. 1
Scanning electron microscopy (SEM) images showing (a) a 45° tilted view of In droplets deposited at 375 °C on InP(111)B by feeding 8.4 × 10−7 mol/s of TMIn for 12 s, (b) 45° tilted, and (c) top view of In(As)P nanowires on InP(111)B grown at 375 °C over 300 s by feeding TMIn, TBP, and TBA into the reactor at the flow rates of 5.0 × 10−5, 7.4 × 10−6, and 8.3 × 10−8 mol/s, respectively