Fig. 2

a Bright field, b dark field, and c Fourier-filtered high-resolution transmission electron microscopy (TEM) images of an In(As)P nanowire grown on InP(111)B nanowire using the same conditions as in Fig. 1. The image in b is obtained using the diffraction spot highlighted by a green circle in (d). This particular nanowire was extracted from a region on the substrate (likely at a lower temperature) that is different from the region shown in Fig. 1. d, e Selected area electron diffraction (SAED) patterns obtained from different wires oriented to different zone axes \( \left[\overline{1}12\right] \) and \( \left[011\right] \), respectively. An additional diffraction spot seen inside the green circle in d is due to crystalline In. e SAED of the whole nanowire shown in c indexed as zinc blende in [011] zone axis. Additional spots are indexed as wurtzite crystal structure in \( \left[2\overline{1}\overline{1}0\right] \) zone axis, which is parallel to \( \left[011\right] \). The high-resolution TEM image in c was Fourier-filtered using ImageJ package to reduce the background noise