Fig. 1

(a) The typical bipolar behavior of the Gd:SiO2 thin film RRAM devices for (b) initial electrical forming process and (c) using the metal-insulator-metal (MIM) structure. (blue lines: λ = 770nm, red lines: λ = 400nm, black lines: standard)
(a) The typical bipolar behavior of the Gd:SiO2 thin film RRAM devices for (b) initial electrical forming process and (c) using the metal-insulator-metal (MIM) structure. (blue lines: λ = 770nm, red lines: λ = 400nm, black lines: standard)