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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching

Fig. 3

The variation of the selective etching rate with reciprocal temperature on the Si surface. The selective etching height is drawn from the results in Fig. 2, and selective etching rate is obtained by dividing the height difference with etching time. The rate can only be obtained when nice hillock can be produced. The activation energy E a can be obtained by measuring the slope based on the Arrhenius equation lnv s = lnA(c)α − E a/(RT), where v s is etching rate, A is frequency factor, c is reactant concentration, α is the reaction order, R is gas constant, and T is thermodynamic etching temperature, respectively [20]

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