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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Fig. 4

a SEM image (45° tilted angle view) of GaSb nanowires grown with a GaSb powder source placed at the furnace center and a growth substrate at a downstream position, 12 cm away from the source. The heating is set at a temperature of 600 °C for 1 h and then the system is cooled down naturally to room temperature. b HRTEM image of an as-grown GaSb nanowire with a diameter of ~25 nm. c EDX spectrum of the nanowire, where the ratio of In:Sb close 1:1 can be extracted. d FFT pattern obtained from the HRTEM image shown in b

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