Fig. 12From: Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors a Normalized values of S ID/I D 2 plotted at various values of (V GS–V th); b Hooge’s coefficient (α H) plotted with respect to (V GS–V th) for the conventional HEMT and the Ga2O3 MOS-HEMTBack to article page