Fig. 2From: Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors a Schematic representation of the cross-sectional structure of a Ga2O3/AlGaN/AlN/GaN HEMT. b Cross-sectional TEM image of a GaN/AlN/AlGaN/Ga2O3/Ni/Au structureBack to article page
