Fig. 9From: Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors I DS–V DS characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT upon varying the value of V G from –6 to +2 V at a step of +1 VBack to article page