Fig. 5From: Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique a Cross section TEM image of InN nanodots formed at the substrate temperature 350 °C on the Si (111) substrate. The average diameter of InN nanodots is 23.8 nm. b PL spectra of InN nanodots with a stronger peak at 0.82 eVBack to article page