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Table 1 InAs DWELL sample list with different matrix designs

From: Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Samples

Under layer

InAs QDs

Capping layer

(a)

2 nm GaAs0.97Bi0.03 SBL(400 °C)

2.2 MLs

6 nm GaAs0.97Bi0.03 SRL (400 °C)

(b)

GaAs(500 °C)

2.2 MLs

6 nm GaAs0.97Bi0.03 SRL (400 °C)

(c)

GaAs(500 °C

2.2 MLs

GaAs (400 °C)

(d)

GaAs(500 °C

2.2 MLs

GaAs (500 °C)

(e)

2 nm In0.1Ga0.9As SBL(500 °C)

2.2 MLs

6 nm GaAs0.97Bi0.03 SRL (400 °C)

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