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Table 1 InAs DWELL sample list with different matrix designs

From: Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Samples Under layer InAs QDs Capping layer
(a) 2 nm GaAs0.97Bi0.03 SBL(400 °C) 2.2 MLs 6 nm GaAs0.97Bi0.03 SRL (400 °C)
(b) GaAs(500 °C) 2.2 MLs 6 nm GaAs0.97Bi0.03 SRL (400 °C)
(c) GaAs(500 °C 2.2 MLs GaAs (400 °C)
(d) GaAs(500 °C 2.2 MLs GaAs (500 °C)
(e) 2 nm In0.1Ga0.9As SBL(500 °C) 2.2 MLs 6 nm GaAs0.97Bi0.03 SRL (400 °C)