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Table 1 The misorientation angles of GaN substrate and SLs for each sample. The fitted \( {\alpha}_0^{\mathrm{GaN}} \) and \( {\alpha}_0^{\mathrm{SL}} \) values are given along with the experimental (\( \varDelta {\alpha}_0^{\mathrm{SL}} \)) and calculated (\( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \)) crystallographic tilt of SLs

From: The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Sample \( {\alpha}_0^{\mathrm{GaN}} \) (°) \( {\alpha}_0^{\mathrm{SL}} \) (°) \( \varDelta {\alpha}_0^{\mathrm{SL}} \) (°) \( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \) (°)
S5 0.676 0.658 −0.018 −0.014
S10 0.684 0.667 −0.017 −0.014
S20 0.710 0.688 −0.022 −0.015