Table 1 The misorientation angles of GaN substrate and SLs for each sample. The fitted \( {\alpha}_0^{\mathrm{GaN}} \) and \( {\alpha}_0^{\mathrm{SL}} \) values are given along with the experimental (\( \varDelta {\alpha}_0^{\mathrm{SL}} \)) and calculated (\( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \)) crystallographic tilt of SLs
Sample | \( {\alpha}_0^{\mathrm{GaN}} \) (°) | \( {\alpha}_0^{\mathrm{SL}} \) (°) | \( \varDelta {\alpha}_0^{\mathrm{SL}} \) (°) | \( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \) (°) |
---|---|---|---|---|
S5 | 0.676 | 0.658 | −0.018 | −0.014 |
S10 | 0.684 | 0.667 | −0.017 | −0.014 |
S20 | 0.710 | 0.688 | −0.022 | −0.015 |