Skip to main content
Account

Table 1 The misorientation angles of GaN substrate and SLs for each sample. The fitted \( {\alpha}_0^{\mathrm{GaN}} \) and \( {\alpha}_0^{\mathrm{SL}} \) values are given along with the experimental (\( \varDelta {\alpha}_0^{\mathrm{SL}} \)) and calculated (\( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \)) crystallographic tilt of SLs

From: The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Sample

\( {\alpha}_0^{\mathrm{GaN}} \) (°)

\( {\alpha}_0^{\mathrm{SL}} \) (°)

\( \varDelta {\alpha}_0^{\mathrm{SL}} \) (°)

\( \varDelta {\alpha}_0^{\mathrm{SL}}\kern0.5em \left(\mathrm{Nagai}\right) \) (°)

S5

0.676

0.658

−0.018

−0.014

S10

0.684

0.667

−0.017

−0.014

S20

0.710

0.688

−0.022

−0.015

Navigation