Table 1 Electrical properties of N: ZnO film oxidized at 400 °C for different times
From: Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film
Samples (min) | Resistivity (Ω cm) | Carrier mobility (cm2/V S) | Concentration (cm−3) | Hall coefficient (cm3/C) |
|---|---|---|---|---|
30 | 7.15 | 0.92 | 9.44 × 1017 | −6.61 |
60 | 449.7 | 2.03 | 6.82 × 1015 | −916.1 |
120 | 28.01 | 1.36 | 1.64 × 1017 | −38.19 |