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Table 1 Photovoltaic characteristics of Si/PEDOT:PSS heterojunction device with or without a SiNx:H layer

From: Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

  V oc (V) J sc (mA/cm2) FF (%) PCE (%) R s (Ωcm2) Rsh (Ωcm2)
W/O SiNx:H 0.523 ± 0.011 24.0 ± 0.18 67.78 ± 0.27 8.40 ± 0.21 7.95 ± 0.42 2570.80 ± 5.78
W/ SiNx:H 0.557 ± 0.014 24.8 ± 0.22 65.24 ± 0.22 9.02 ± 0.15 10.39 ± 0.40 5544.18 ± 4.69
  1. Note: Values were obtained by averaging five devices with a calculated confidence interval of 95 %