Skip to main content
SpringerLink
Account

Table 2 Diode ideality factors (n), reverse saturation current densities (J s), and Schottky barrier heights (Φ bi) values of Si/PEDOT:PSS heterojunction solar cells with or without a SiNx:H layer

From: Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

 

J s (A/cm2)

Diode ideality factors (n)

Φ bi (eV)

W/o SiNX:H

1.08 × 10-6

2.59

0.77084

W/ SiNX:H

5.55 × 10-7

2.45

0.78794

Back to article page

Search

Navigation