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Table 2 Diode ideality factors (n), reverse saturation current densities (J s), and Schottky barrier heights (Φ bi) values of Si/PEDOT:PSS heterojunction solar cells with or without a SiNx:H layer

From: Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

  J s (A/cm2) Diode ideality factors (n) Φ bi (eV)
W/o SiNX:H 1.08 × 10-6 2.59 0.77084
W/ SiNX:H 5.55 × 10-7 2.45 0.78794