Rear-Sided Passivation by SiN x :H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Nanoscale Research Letters

Table 2 Diode ideality factors (n), reverse saturation current densities (J _s), and Schottky barrier heights (Φ _bi) values of Si/PEDOT:PSS heterojunction solar cells with or without a SiN_x:H layer

	J _s (A/cm²)	Diode ideality factors (n)	Φ _bi (eV)
W/o SiNX:H	1.08 × 10^-6	2.59	0.77084
W/ SiNX:H	5.55 × 10^-7	2.45	0.78794