Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO2 Passivation

Table 1 Comparison of device properties between this and other ZnO-based UV PDs

Materials	Wavelength (nm)	Responsivity (mA/W)	Rise/fall time (s)	Bias voltage (V)	Reference
ZnO NRs-phenanthrene	365	2.0 × 10⁷	–	2	[7]
ZnO NPs-graphene core-shell	375	640 × 10³	0.009/0.011	20	[39]
ZnO NRs-PVK-Cu₂O	360	13.28 × 10³	8.7/128.3	−0.5	[8]
ZnO NRs between asymmetry Au	370	20	–	0	[3]
ZnO NCs	350	>8.5	0.5/1	0	[6]
ZnO NRs on AZO	380	102	55.5/33.1	5	This work