Fig. 2From: Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers a Cross-section TEM micrographs with low and high magnifications for the nominal P concentration of 0.2 % nc-Si/SiO2 multilayers after 1000 °C annealing. b Size distribution of the nc-Si dots in the doped nc-Si/SiO2 filmBack to article page