Fig. 4
From: Performance of Nano-Submicron-Stripe Pd Thin-Film Temperature Sensors
Photographs of the measuring system fabricated with photolithography. a Photograph of the 4′ silicon wafer with nine devices in a 3 × 3 matrix. b Photograph of one device with a size of 2.5 × 2.5 cm2. It contains 72 to 128 contact pads. c Microscopy picture of one central circular sensing region without local heater. The central circle is 1000 μm in diameter. The narrow lines are 5 μm in width, and the wide lines are 30 μm for heaters. d Microscopy picture of one central sensing region with an onsite heater highlighted with red frame