Fig. 15From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices a Cross-section TEM image of Ti/AZTO/Al2O3/Pt structure. b Schematic of the fabricated memory device structure. c Inhibit ratio (IR) of the nonlinear AZTO-based RRAM device. d The read margin analysis indicate that the proposed IR can extend array to ~3K bits [200]Back to article page