Fig. 18From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices a Typical FE-SEM plane-view images of laterally bridged ZnO NRs. b Unipolar resistive switching of a laterally bridged ZnO NR-based memory device in the voltage-sweeping mode. c Schematic presentation of the filaments in the generated region and the ohmic conduction region [59]Back to article page