Fig. 21
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
Time-resolved photocurrent under 0.5 V bias of Pt/ZnO/Pt capacitors at UV wavelength of 365 nm in the (a) initial resistance state (IRS), b high-resistance state (HRS) and c low-resistance state (LRS) [269]. d RS characteristics of Au-coated ZnOnanorods/FTO memory devices were verified by repeating the sequence of SET and RESET processes; each data was extracted at 0.01 V and (e) with a time to current graph by repeating the sequence of d-HRS and i-LRS under alternating illumination (at a light wavelength of 200 to 2500 nm) and dark condition cycling [255]