Fig. 22
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
a-d Room temperature hysteresis loops of the Pt/Zn0.95Co0.05O/Pt devices for two consecutive cycles at HRS and LRS. The anomalous prostrusion in the curves indicated by arrows in b, d. The MS (e) and HC (f) are modulated reversibly by resistive switching effects. (g) Schematic of ferromagnetic ordering based on the BMP mechanism at HRS and (h) mechanism of the resistive switching and magnetic modulation during the set process [139]