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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Fig. 4

In situ TEM images of the reset process using the unipolar resistive switching method. a The start of recording; b intermediate state; c final state of the ruptured filament after the reset process. d The corresponding I-V curve in red; the blue line corresponds to the forming process as a comparison. e The other conductive filament in the same in situ specimen, indicating that the switching behavior is caused by multi-filament formation and rupture. f The selected area diffraction pattern of the conductive filament in Fig. 2e. The Zn (101) diffraction spot is marked with the red circle. g The corresponding dark-field image obtained from the diffraction spot marked as a circle in the diffraction pattern (f). h The Moire fringes can be observed at the disrupted region from a high-magnification TEM image. i The HRTEM image along the (110) zone axis in the disrupted region, revealing that the conductive filaments were converted back to ZnO1 − x. j The HRTEM of the “zinc” conductive filament along the (231) zone axis has been identified. k Solid-sphere model of ZnO in a wurtzite structure along the (110) zone axis. The coordinate lines are the unit cell vectors. l Solid-sphere model of zinc in a HCP structure along the (231) zone axis. The three-dimensional schematic illustrations of m a ZnO unit cell and n a zinc unit cell, respectively, showing that the zinc atoms position remain the same as the oxygen ions diffuse out [89]

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