Fig. 5From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices a Typical I-V characteristics of various electrode materials with TE/ZnO/Pt structures. The inset shows the schematic structure for electrical measurement of TE/ZnO/Pt structures. b The cumulative probability of V-Set and V-Reset. c The cumulative probability of HRS and LRS [163]Back to article page