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Table 1 ZnO-based RRAM fabricated with various metal electrodes in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No Structure CC (mA) V F (V) V R (V) V S (V) Mode Endurance (cycles) ON/OFF ratio (times) Retention (seconds) Stress (seconds) Memory type Ref.
1 Pt/ZnO/Pt 30 ~3.3 −1 ~−2 U 100 103–104 NA NA VCM [118]
2 Pt/ZnO/Pt 3 ~4 ~−0.5 ~1.2 B 102/106(AC) >102 >6 × 105/RT NA VCM [122]
3 Pt/ZnO/Pt NS NS −2.5 2.5 R 100 >40 NA NA VCM [126]
4 Pt/ZnO/Pt 10 ~4 ~0.5 ~1.5 U 200 58 9 × 104/RT NA VCM [127]
5 Pt/ZnO/Ru 10 ~4 ~0.7 ~1.9 U 200 175 9 × 104/RT NA VCM [127]
6 Ru/ZnO/Pt 10 ~4 ~1 ~2.1 U 200 61 9 × 104/RT NA VCM [127]
7 TiN/ZnO/Pt 5 FF ~−1.2 ~1.2 B >500 10 NA 105/RT VCM [119]
8 Au/ZnO/ITO SC FF ~2 ~−2 B >102 >10 104/RT NA VCM [120]
9 Al/ZnO/Al 1 NS ~0.5 ~2.5 U 219 104 103 103/RT VCM [117, 121]
10 Al/ZnO/P++−Si 5 1.56 0.27 ~1.41 U >400 >103 NA NA VCM [123]
11 TiN/ZnO/TiN ~80 FF 3 −4 B NA >10 104 NA VCM [133]
12 Ag/ZnO/Pt 10 FF ~−0.4 0.8 B 40 102 NA 104/RT ECM [124]
13 Ag/ZnO/Cu NS 2.5 ~−1.3 ~1.3 B >500 103 NA NA ECM [125]
14 Cu/ZnO/ITO NA 4.42 0.6 2.6 U 300 >20 NA NA ECM [128]
15 Ag/a-ZnO/Pt 0.5 FF −2 <0.5 B 100 107 106/RT NA ECM [132]
  1. Unless specified, endurance was measured using DC voltage sweeping mode
  2. CC current compliance, V F forming voltage, V R reset voltage, V S set voltage, SC self-compliance, FF forming free, U unipolar, B bipolar, RT measured at room temperature, NA data not available, NS not specified