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Table 1 ZnO-based RRAM fabricated with various metal electrodes in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No

Structure

CC (mA)

V F (V)

V R (V)

V S (V)

Mode

Endurance (cycles)

ON/OFF ratio (times)

Retention (seconds)

Stress (seconds)

Memory type

Ref.

1

Pt/ZnO/Pt

30

~3.3

−1

~−2

U

100

103–104

NA

NA

VCM

[118]

2

Pt/ZnO/Pt

3

~4

~−0.5

~1.2

B

102/106(AC)

>102

>6 × 105/RT

NA

VCM

[122]

3

Pt/ZnO/Pt

NS

NS

−2.5

2.5

R

100

>40

NA

NA

VCM

[126]

4

Pt/ZnO/Pt

10

~4

~0.5

~1.5

U

200

58

9 × 104/RT

NA

VCM

[127]

5

Pt/ZnO/Ru

10

~4

~0.7

~1.9

U

200

175

9 × 104/RT

NA

VCM

[127]

6

Ru/ZnO/Pt

10

~4

~1

~2.1

U

200

61

9 × 104/RT

NA

VCM

[127]

7

TiN/ZnO/Pt

5

FF

~−1.2

~1.2

B

>500

10

NA

105/RT

VCM

[119]

8

Au/ZnO/ITO

SC

FF

~2

~−2

B

>102

>10

104/RT

NA

VCM

[120]

9

Al/ZnO/Al

1

NS

~0.5

~2.5

U

219

104

103

103/RT

VCM

[117, 121]

10

Al/ZnO/P++−Si

5

1.56

0.27

~1.41

U

>400

>103

NA

NA

VCM

[123]

11

TiN/ZnO/TiN

~80

FF

3

−4

B

NA

>10

104

NA

VCM

[133]

12

Ag/ZnO/Pt

10

FF

~−0.4

0.8

B

40

102

NA

104/RT

ECM

[124]

13

Ag/ZnO/Cu

NS

2.5

~−1.3

~1.3

B

>500

103

NA

NA

ECM

[125]

14

Cu/ZnO/ITO

NA

4.42

0.6

2.6

U

300

>20

NA

NA

ECM

[128]

15

Ag/a-ZnO/Pt

0.5

FF

−2

<0.5

B

100

107

106/RT

NA

ECM

[132]

  1. Unless specified, endurance was measured using DC voltage sweeping mode
  2. CC current compliance, V F forming voltage, V R reset voltage, V S set voltage, SC self-compliance, FF forming free, U unipolar, B bipolar, RT measured at room temperature, NA data not available, NS not specified

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