Table 1 ZnO-based RRAM fabricated with various metal electrodes in published literature
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
No | Structure | CC (mA) | V F (V) | V R (V) | V S (V) | Mode | Endurance (cycles) | ON/OFF ratio (times) | Retention (seconds) | Stress (seconds) | Memory type | Ref. |
---|---|---|---|---|---|---|---|---|---|---|---|---|
1 | Pt/ZnO/Pt | 30 | ~3.3 | −1 | ~−2 | U | 100 | 103–104 | NA | NA | VCM | [118] |
2 | Pt/ZnO/Pt | 3 | ~4 | ~−0.5 | ~1.2 | B | 102/106(AC) | >102 | >6 × 105/RT | NA | VCM | [122] |
3 | Pt/ZnO/Pt | NS | NS | −2.5 | 2.5 | R | 100 | >40 | NA | NA | VCM | [126] |
4 | Pt/ZnO/Pt | 10 | ~4 | ~0.5 | ~1.5 | U | 200 | 58 | 9 × 104/RT | NA | VCM | [127] |
5 | Pt/ZnO/Ru | 10 | ~4 | ~0.7 | ~1.9 | U | 200 | 175 | 9 × 104/RT | NA | VCM | [127] |
6 | Ru/ZnO/Pt | 10 | ~4 | ~1 | ~2.1 | U | 200 | 61 | 9 × 104/RT | NA | VCM | [127] |
7 | TiN/ZnO/Pt | 5 | FF | ~−1.2 | ~1.2 | B | >500 | 10 | NA | 105/RT | VCM | [119] |
8 | Au/ZnO/ITO | SC | FF | ~2 | ~−2 | B | >102 | >10 | 104/RT | NA | VCM | [120] |
9 | Al/ZnO/Al | 1 | NS | ~0.5 | ~2.5 | U | 219 | 104 | 103 | 103/RT | VCM | |
10 | Al/ZnO/P++−Si | 5 | 1.56 | 0.27 | ~1.41 | U | >400 | >103 | NA | NA | VCM | [123] |
11 | TiN/ZnO/TiN | ~80 | FF | 3 | −4 | B | NA | >10 | 104 | NA | VCM | [133] |
12 | Ag/ZnO/Pt | 10 | FF | ~−0.4 | 0.8 | B | 40 | 102 | NA | 104/RT | ECM | [124] |
13 | Ag/ZnO/Cu | NS | 2.5 | ~−1.3 | ~1.3 | B | >500 | 103 | NA | NA | ECM | [125] |
14 | Cu/ZnO/ITO | NA | 4.42 | 0.6 | 2.6 | U | 300 | >20 | NA | NA | ECM | [128] |
15 | Ag/a-ZnO/Pt | 0.5 | FF | −2 | <0.5 | B | 100 | 107 | 106/RT | NA | ECM | [132] |