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Table 2 Doped ZnO-based RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No

Structure

CC (mA)

V F (V)

V R (V)

V S (V)

Mode

Endurance (cycles)

ON/OFF ratio (times)

Retention (seconds)

Stress (seconds)

Ref.

1

Cu/N:ZnO/Pt

10

NS

~−0.45

~1.47

B

100

>102

NA

NA

[56]

2

Ag/Zn0.98Cu0.02O/ITO

10

NS

~−0.02

1.8

B

NA

106

<103

NA

[87]

1

NS

−3.5

−15

U

NA

104

>103

NA

3

Pt/ZnVO/Pt

10

~−4

~−0.5

~−2.5

B

105

~102

36 × 103/85 °C

NA

[85]

4

Pt/Zn0.99Zr0.01O/Pt

1

~−2

~1

~−1.5

B

104

~102

NA

NA

[86]

5

Al/ZTO/Pt

5 × 10−4

~−2

~1

~−2.5

B

50

1.4 × 103

104/RT

NA

[90]

6

Pt/Mn:ZnO/Si

NS

FF

~−20

~20

B

45 × 102

~ 103

5 × 103/RT

NA

[91]

7

Pt/Zn1 − xCrxO/Pt

FF

~3.5

~3

B

100

7 × 103

36 × 103/RT

NA

[110]

8

Ti/AZTO/Pt

3

NS

~1.6

~1.1

B

256

18

NA

104

[136]

9

Au/Co-ZnO/ITO/Au

FF

4

2.6

BS

4000

~7

NA

NA

[138]

10

Pt/Co:ZnO/Pt

10

FF

~−1

1.5–3

B

300

102

NA

NA

[139]

11

Al/ZnO:Cu/Pt

10

~12

~0.5

~2

U

450

470

104/RT

NA

[140]

12

TiN/Ti/IGZO/Pt

10

~6

~−1.5

~1

B

104

~10

NA

NA

[141]

13

Pt/a-IGZO/Pt

10

~10

~−1

~1.5

B

100

>10

>104/RT

NA

[142]

14

Al/IGZO/Al

~5

~5

~−5

B

100

~2

NA

NA

[143]

15

Pt/ZnLaO/p-Si

10

~6

~1

~2.5

U

150

>10

106

NA

[144]

Pt/ZnLaO/Pt

10

~4

~0.5

~2.5

>103

NA

16

Pt/(Zn1 − xMgx)O/Pt

10

~5

~1.5

~3.5

U

50

140–103

NA

NA

[145]

17

Cu/ZnO:Mn/Pt

5

~1.9

~−0.6

~1.2

B

65

>103

104/85 °C

NA

[146]

18

Au/ZnMn2O4/Pt

1

NS

~2

~10

U

8000

105–107

4 × 104/RT

NA

[147]

Au/ZnMnO3/Pt

104–105

19

Pt/Mn:ZnOxS1 − x/Cu

NS

NS

~0.5

1–3

U

100

105–106

104/RT

NA

[148]

20

Au/Cr/ZnO:N/TiN

5

2.5

~−1

~0.75

B

100

~1

104/RT

NA

[149]

21

Au/Ti:ZnO/ITO

FF

~−3

~3

B

200

14

2 × 103/RT

NA

[150]

22

Pt/ZnO:Ti/n+–Si

10

~5.5

~1

2–4

U

200

>102

>105/RT

NA

[151]

23

Ag/ZnO:Mn/Pt

SC

FF

−2.6–−0.5

0.3–3.8

B

100

107

>107/RT

NA

[152]

24

Al/GaZnOx/p+-Si

7

~4.8

~−2.8

~3.5

B

100

102

NA

NA

[183]

25

Ti/Mg0.1ZnO0.9/Pt

1

FF

−1.5

1.5

B

500

>103

104

NA

[189]

  1. NS not specified, CC current compliance, SC self-compliance, FF forming free, U unipolar, B bipolar, BS bistable, VF forming voltage, VR reset voltage, VS set voltage, RT measured at room temperature, NA data not available

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