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Table 3 Multilayered and embedded ZnO-based RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No Structure CC (mA) V F (V) V R (V) V S (V) Mode Endurance (cycles) ON/OFF ratio (times) Retention (seconds) Stress (seconds) Ref.
1 Pt/ZnO/Ag0.2-Al0.8/Al 1 NS ~0.3 ~2 U 200 >102 NA NA [53]
2 TiN/MgZnO/ZnO/Pt 10/20 ~6 −2 ~1 B 104 >50 3 × 104/RT NA [55]
3 Pt/ZnO/ZrO2/Pt 10 ~−6.5 −4 ~3 B 100 ~5 NA 104 [83]
4 Pt/ZnO/CoOx/ZnO/Pt 10 FF 0.8–1.8 1.5–2.9 B 200 ~102 NA NA [155]
5 Pt/ZnLaO/ZnO/Pt 10 ~3.5 ~1 ~2.3 U 100 ~104 104/65 °C NA [156]
6 Ag/CeO2/ZnO/NSTO 10 NS −5 ~2 B 100 540 103/RT NA [157]
7 Pt/ZnO/Cr/ZnO/Pt NS ~2 −2 3 B 104 ~104 NA 5 × 103 [158]
8 Pt/(ZnO/Ti/ZnO)1–4/ITO NS FF ~−2.5 ~2 B 320 ~103 >106 NA [159]
9 Ag/GZO/ZnO/Pt/Ti 10 FF 0.55 0.4 B ~40 2 × 103 1.1 × 104 NA [182]
10 Pt/TiOx/ZnO/n+-Si NS ~2.8 ~0.5 ~2 U >50 >102 NA NA [286]
11 Al/Al2O3/(ZnO/Al2O3)10/n-Si/Al NS FF −7 7 B NA 103–104 103 NA [287]
  1. NS not specified, CC current compliance, FF forming free, U unipolar, B bipolar, VF forming voltage, VR reset voltage, VS set voltage, RT measured at room temperature, NA data not available