Table 3 Multilayered and embedded ZnO-based RRAM in published literature
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
No | Structure | CC (mA) | V F (V) | V R (V) | V S (V) | Mode | Endurance (cycles) | ON/OFF ratio (times) | Retention (seconds) | Stress (seconds) | Ref. |
---|---|---|---|---|---|---|---|---|---|---|---|
1 | Pt/ZnO/Ag0.2-Al0.8/Al | 1 | NS | ~0.3 | ~2 | U | 200 | >102 | NA | NA | [53] |
2 | TiN/MgZnO/ZnO/Pt | 10/20 | ~6 | −2 | ~1 | B | 104 | >50 | 3 × 104/RT | NA | [55] |
3 | Pt/ZnO/ZrO2/Pt | 10 | ~−6.5 | −4 | ~3 | B | 100 | ~5 | NA | 104 | [83] |
4 | Pt/ZnO/CoOx/ZnO/Pt | 10 | FF | 0.8–1.8 | 1.5–2.9 | B | 200 | ~102 | NA | NA | [155] |
5 | Pt/ZnLaO/ZnO/Pt | 10 | ~3.5 | ~1 | ~2.3 | U | 100 | ~104 | 104/65 °C | NA | [156] |
6 | Ag/CeO2/ZnO/NSTO | 10 | NS | −5 | ~2 | B | 100 | 540 | 103/RT | NA | [157] |
7 | Pt/ZnO/Cr/ZnO/Pt | NS | ~2 | −2 | 3 | B | 104 | ~104 | NA | 5 × 103 | [158] |
8 | Pt/(ZnO/Ti/ZnO)1–4/ITO | NS | FF | ~−2.5 | ~2 | B | 320 | ~103 | >106 | NA | [159] |
9 | Ag/GZO/ZnO/Pt/Ti | 10 | FF | 0.55 | 0.4 | B | ~40 | 2 × 103 | 1.1 × 104 | NA | [182] |
10 | Pt/TiOx/ZnO/n+-Si | NS | ~2.8 | ~0.5 | ~2 | U | >50 | >102 | NA | NA | [286] |
11 | Al/Al2O3/(ZnO/Al2O3)10/n-Si/Al | NS | FF | −7 | 7 | B | NA | 103–104 | 103 | NA | [287] |