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Table 3 Multilayered and embedded ZnO-based RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No

Structure

CC (mA)

V F (V)

V R (V)

V S (V)

Mode

Endurance (cycles)

ON/OFF ratio (times)

Retention (seconds)

Stress (seconds)

Ref.

1

Pt/ZnO/Ag0.2-Al0.8/Al

1

NS

~0.3

~2

U

200

>102

NA

NA

[53]

2

TiN/MgZnO/ZnO/Pt

10/20

~6

−2

~1

B

104

>50

3 × 104/RT

NA

[55]

3

Pt/ZnO/ZrO2/Pt

10

~−6.5

−4

~3

B

100

~5

NA

104

[83]

4

Pt/ZnO/CoOx/ZnO/Pt

10

FF

0.8–1.8

1.5–2.9

B

200

~102

NA

NA

[155]

5

Pt/ZnLaO/ZnO/Pt

10

~3.5

~1

~2.3

U

100

~104

104/65 °C

NA

[156]

6

Ag/CeO2/ZnO/NSTO

10

NS

−5

~2

B

100

540

103/RT

NA

[157]

7

Pt/ZnO/Cr/ZnO/Pt

NS

~2

−2

3

B

104

~104

NA

5 × 103

[158]

8

Pt/(ZnO/Ti/ZnO)1–4/ITO

NS

FF

~−2.5

~2

B

320

~103

>106

NA

[159]

9

Ag/GZO/ZnO/Pt/Ti

10

FF

0.55

0.4

B

~40

2 × 103

1.1 × 104

NA

[182]

10

Pt/TiOx/ZnO/n+-Si

NS

~2.8

~0.5

~2

U

>50

>102

NA

NA

[286]

11

Al/Al2O3/(ZnO/Al2O3)10/n-Si/Al

NS

FF

−7

7

B

NA

103–104

103

NA

[287]

  1. NS not specified, CC current compliance, FF forming free, U unipolar, B bipolar, VF forming voltage, VR reset voltage, VS set voltage, RT measured at room temperature, NA data not available

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