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Table 4 ZnO-based transparent RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No Structure %T Mode CC (mA) V F (V) V R (V) V S (V) Endurance (cycles) ON/OFF ratio (times) Retention (s/°C) Ref.
1 AZO/ZnO1 − x/ITO ~85 B 1 −5.5/4 (DF) −2 ~1.7 >450 ~102 104/RT [54]
2 ITO/Zn0.98Co0.02O/ITO 90 B 5 3 −1.5 1.2 5000 15 NA [169]
3 ITO/AZO/ITO ~81 B 10 ~2.3 ~−0.5 ~0.5 300 3 NA [176]
4 ITO/ZnO/ITO 81 U 15 3.2 1.8 2.6 102 ~102 105/RT [212]
5 ITO/ZnO:Mg/FTO 80 B 50 2.8 −3 1.8 105 2.5 5 × 103/110 °C [213]
6 ITO/GZO/ITO ~86.5 B 0.1 FF −7 6 350 15 NA [214]
7 ITO/GZO-nanorods/ZnO/ITO ~80 B 10 ~3 ~−2 ~2 >7000 >200 104/85 °C [216]
8 ITO/graphene/ZnO/ITO 75.6 B 5 4 ~−2.5 ~1 100 20 104/RT [217]
9 ITO/ZnO/Pr0.7Ca0.3MnO3/ITO 79.6 B 10 FF ~2 ~−2 2.5 × 103 104 NA [218]
10 AZO/ZnO/ITO ~80 B 10 ~3.5 −2 ~1.5 104 14 NA [219]
12 AZO/MZO/AZO 64–82 B 1 −6 ~−4 ~3 50 3 105/RT [221]
13 GZO/ZnO/GZO ~80 U 10 3.5 ~1.6 ~2.2 7 ~5 NA [222]
14 GZO/Ga2O3/ZnO/Ga2O3/GZO 92 B 20 FF −12 14 50 102 105/RT [223]
15 ITO/IGZO/ITO 70–80 B 10 FF 3.5 ~−1 102 32 104/RT [288]
  1. %T percentage of transmittance in visible range, U unipolar, B bipolar, CC current compliance, FF free forming, V F forming voltage, V R reset voltage, V S set voltage, DF double forming, RT measured at room temperature, NA data not available