Table 4 ZnO-based transparent RRAM in published literature
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
No | Structure | %T | Mode | CC (mA) | V F (V) | V R (V) | V S (V) | Endurance (cycles) | ON/OFF ratio (times) | Retention (s/°C) | Ref. |
|---|---|---|---|---|---|---|---|---|---|---|---|
1 | AZO/ZnO1 − x/ITO | ~85 | B | 1 | −5.5/4 (DF) | −2 | ~1.7 | >450 | ~102 | 104/RT | [54] |
2 | ITO/Zn0.98Co0.02O/ITO | 90 | B | 5 | 3 | −1.5 | 1.2 | 5000 | 15 | NA | [169] |
3 | ITO/AZO/ITO | ~81 | B | 10 | ~2.3 | ~−0.5 | ~0.5 | 300 | 3 | NA | [176] |
4 | ITO/ZnO/ITO | 81 | U | 15 | 3.2 | 1.8 | 2.6 | 102 | ~102 | 105/RT | [212] |
5 | ITO/ZnO:Mg/FTO | 80 | B | 50 | 2.8 | −3 | 1.8 | 105 | 2.5 | 5 × 103/110 °C | [213] |
6 | ITO/GZO/ITO | ~86.5 | B | 0.1 | FF | −7 | 6 | 350 | 15 | NA | [214] |
7 | ITO/GZO-nanorods/ZnO/ITO | ~80 | B | 10 | ~3 | ~−2 | ~2 | >7000 | >200 | 104/85 °C | [216] |
8 | ITO/graphene/ZnO/ITO | 75.6 | B | 5 | 4 | ~−2.5 | ~1 | 100 | 20 | 104/RT | [217] |
9 | ITO/ZnO/Pr0.7Ca0.3MnO3/ITO | 79.6 | B | 10 | FF | ~2 | ~−2 | 2.5 × 103 | 104 | NA | [218] |
10 | AZO/ZnO/ITO | ~80 | B | 10 | ~3.5 | −2 | ~1.5 | 104 | 14 | NA | [219] |
12 | AZO/MZO/AZO | 64–82 | B | 1 | −6 | ~−4 | ~3 | 50 | 3 | 105/RT | [221] |
13 | GZO/ZnO/GZO | ~80 | U | 10 | 3.5 | ~1.6 | ~2.2 | 7 | ~5 | NA | [222] |
14 | GZO/Ga2O3/ZnO/Ga2O3/GZO | 92 | B | 20 | FF | −12 | 14 | 50 | 102 | 105/RT | [223] |
15 | ITO/IGZO/ITO | 70–80 | B | 10 | FF | 3.5 | ~−1 | 102 | 32 | 104/RT | [288] |