Table 5 ZnO-based flexible RRAM in published literature
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
No | Structure | %T | Mode | CC (mA) | V F (V) | V R (V) | V S (V) | Endurance (cycles) | ON/OFF ratio (times) | Retention (s/°C) | Stress (s) | Flexibility test | Ref. | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Bending cycles (times) | Radii (mm) | ON/OFF ratio (times) | |||||||||||||
1 | GZO/GZO(H)/GZO/PEN | 66 | B | 0.1 | ~1.7 | −2 | ~1.5 | 20 | 20 | NA | NA | NA | NA | NA | [113] |
2 | Ag/ZnO/ITO/PET | NT | B | SC | NS | 3 – 4.9 | −0.7–−3.2 | >100 | >60 | >4 × 103/RT | NA | 2400 | 8 | ~10 | [220] |
3 | Al/GOZNs/ITOPET | NT | B | 2 | NS | −2 | 2.1 | 200 | ~102 | 104/RT | NA | 103 | 6 | ~102 | [230] |
4 | Cu/ZnO:Mg/ITO/PET | NT | B | 1 | 2.6 | ~−1.5 | ~ 1 | 100 | 30 | 144 × 102/RT | NA | 103 | 20 | 30 | [231] |
5 | Al/ZnO/Al/plastic | NT | U | 5 | FF | ~0.5 | ~2 | 104 | 104 | NA | 105 | 105 | NS | ~10 | [232] |
6 | ITO/ZnO/ITO/Ag/ITO/PES | 80 | U | 10 | 3.4 | 0.6 | 1.5 | 200 | >10 | 105/85 °C | NA | 104 | 20 | >10 | [233] |
7 | Au/ZnO NR/Au/PI | NT | U | 50 | ~1.7 | 0.23 ± 0.02 | 0.84 ± 0.04 | >100 | 10 | 104/RT | NA | 100 | 20 | ~10 | [234] |
8 | Al/Mn:ZnO/HfO2/Ti/Pt/Kapton | NT | B | NS | NS | −5 | 5 | 50 | 70 | NA | 500 | 500 | 11 | ~70 | [235] |
9 | Au/ZnO/Stainless steel | NT | NP | 30 | NS | ±0.5–0.8 | ±1.0–2.0 | 100 | 102 | NA | NA | NA | NA | NA | [237] |
10 | Cu/α-IGZO/Cu/plastic | ~65 | U | 3 | FF | ~0.5 | ~1.5 | 150 | 102–103 | NS | NA | 105 | NS | 102 | [240] |