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Table 5 ZnO-based flexible RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No Structure %T Mode CC (mA) V F (V) V R (V) V S (V) Endurance (cycles) ON/OFF ratio (times) Retention (s/°C) Stress (s) Flexibility test Ref.
Bending cycles (times) Radii (mm) ON/OFF ratio (times)
1 GZO/GZO(H)/GZO/PEN 66 B 0.1 ~1.7 −2 ~1.5 20 20 NA NA NA NA NA [113]
2 Ag/ZnO/ITO/PET NT B SC NS 3 – 4.9 −0.7–−3.2 >100 >60 >4 × 103/RT NA 2400 8 ~10 [220]
3 Al/GOZNs/ITOPET NT B 2 NS −2 2.1 200 ~102 104/RT NA 103 6 ~102 [230]
4 Cu/ZnO:Mg/ITO/PET NT B 1 2.6 ~−1.5 ~ 1 100 30 144 × 102/RT NA 103 20 30 [231]
5 Al/ZnO/Al/plastic NT U 5 FF ~0.5 ~2 104 104 NA 105 105 NS ~10 [232]
6 ITO/ZnO/ITO/Ag/ITO/PES 80 U 10 3.4 0.6 1.5 200 >10 105/85 °C NA 104 20 >10 [233]
7 Au/ZnO NR/Au/PI NT U 50 ~1.7 0.23 ± 0.02 0.84 ± 0.04 >100 10 104/RT NA 100 20 ~10 [234]
8 Al/Mn:ZnO/HfO2/Ti/Pt/Kapton NT B NS NS −5 5 50 70 NA 500 500 11 ~70 [235]
9 Au/ZnO/Stainless steel NT NP 30 NS ±0.5–0.8 ±1.0–2.0 100 102 NA NA NA NA NA [237]
10 Cu/α-IGZO/Cu/plastic ~65 U 3 FF ~0.5 ~1.5 150 102–103 NS NA 105 NS 102 [240]
  1. %T percentage of approximate transmittance in visible range, NT not transparent, NP nonpolar, CC current compliance, U unipolar, B bipolar, SC self-compliance, FF free forming, Vf forming voltage, Vr reset voltage, Vs set voltage, RT room temperature, NS not specified, NA not available