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Table 5 ZnO-based flexible RRAM in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No

Structure

%T

Mode

CC (mA)

V F (V)

V R (V)

V S (V)

Endurance (cycles)

ON/OFF ratio (times)

Retention (s/°C)

Stress (s)

Flexibility test

Ref.

Bending cycles (times)

Radii (mm)

ON/OFF ratio (times)

1

GZO/GZO(H)/GZO/PEN

66

B

0.1

~1.7

−2

~1.5

20

20

NA

NA

NA

NA

NA

[113]

2

Ag/ZnO/ITO/PET

NT

B

SC

NS

3 – 4.9

−0.7–−3.2

>100

>60

>4 × 103/RT

NA

2400

8

~10

[220]

3

Al/GOZNs/ITOPET

NT

B

2

NS

−2

2.1

200

~102

104/RT

NA

103

6

~102

[230]

4

Cu/ZnO:Mg/ITO/PET

NT

B

1

2.6

~−1.5

~ 1

100

30

144 × 102/RT

NA

103

20

30

[231]

5

Al/ZnO/Al/plastic

NT

U

5

FF

~0.5

~2

104

104

NA

105

105

NS

~10

[232]

6

ITO/ZnO/ITO/Ag/ITO/PES

80

U

10

3.4

0.6

1.5

200

>10

105/85 °C

NA

104

20

>10

[233]

7

Au/ZnO NR/Au/PI

NT

U

50

~1.7

0.23 ± 0.02

0.84 ± 0.04

>100

10

104/RT

NA

100

20

~10

[234]

8

Al/Mn:ZnO/HfO2/Ti/Pt/Kapton

NT

B

NS

NS

−5

5

50

70

NA

500

500

11

~70

[235]

9

Au/ZnO/Stainless steel

NT

NP

30

NS

±0.5–0.8

±1.0–2.0

100

102

NA

NA

NA

NA

NA

[237]

10

Cu/α-IGZO/Cu/plastic

~65

U

3

FF

~0.5

~1.5

150

102–103

NS

NA

105

NS

102

[240]

  1. %T percentage of approximate transmittance in visible range, NT not transparent, NP nonpolar, CC current compliance, U unipolar, B bipolar, SC self-compliance, FF free forming, Vf forming voltage, Vr reset voltage, Vs set voltage, RT room temperature, NS not specified, NA not available

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