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Table 6 Performance comparison of Pt or Ag/metal oxide/Pt in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No

Structure

SL thickness (nm)

Maximum operation current (mA)

Set/reset operation speed (μs)

Endurance/ratio (cycles)/(times)

Retention (seconds or hours)

Stress (seconds)

Ref.

1

Pt/ZnO/Pt

25

3

104

106(AC)/>102

>6 × 105s/RT

NA

[122]

2

Pt/Al2O3/Pt

2

~1

0.07

105/102

NA

NA

[289]

3

Pt/NiO/Pt

10

0.1

0.1/~1

100/~10

1000 h/150 °C

NA

[290]

4

Pt/TaOx/Pt

30

<0.17

0.01

109/~10

3000 h/150 °C

NA

[291]

5

Pt/TiO2/Pt

27

3

DC

80/~102

NA

NA

[292]

6

Pt/ZrO2/Pt

130

~10

104/5 × 104

105/103

NA

NA

[293]

7

Pt/Gd2O3/Pt

120

35

DC

60/>106

30 h/85 °C

NA

[294]

8

Ag/ZnO/Pt

100

10

DC

40/102

NA

104/RT

[124]

9

Ag/La2O3/Pt

50

0.035

DC

>103/>103

106 s/RT

NA

[295]

10

Ag/SiO2/Pt

80

0.5

DC

~35/106

~2 × 103s/RT

NA

[296]

11

Ag/TaOx/Pt

65

~100

NA

NA

NA

NA

[297]

12

Ag/ZrO2/Pt

50

5

DC

>102/>102

NA

~7.5 × 103/RT

[298]

13

Ag/TiO2/Pt

40

0.29

100/103

~10/~106

104 s/RT

NA

[299]

  1. RT measured at room temperature, NA data not available, DC direct-current voltage sweeping mode

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