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Table 6 Performance comparison of Pt or Ag/metal oxide/Pt in published literature

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

No Structure SL thickness (nm) Maximum operation current (mA) Set/reset operation speed (μs) Endurance/ratio (cycles)/(times) Retention (seconds or hours) Stress (seconds) Ref.
1 Pt/ZnO/Pt 25 3 104 106(AC)/>102 >6 × 105s/RT NA [122]
2 Pt/Al2O3/Pt 2 ~1 0.07 105/102 NA NA [289]
3 Pt/NiO/Pt 10 0.1 0.1/~1 100/~10 1000 h/150 °C NA [290]
4 Pt/TaOx/Pt 30 <0.17 0.01 109/~10 3000 h/150 °C NA [291]
5 Pt/TiO2/Pt 27 3 DC 80/~102 NA NA [292]
6 Pt/ZrO2/Pt 130 ~10 104/5 × 104 105/103 NA NA [293]
7 Pt/Gd2O3/Pt 120 35 DC 60/>106 30 h/85 °C NA [294]
8 Ag/ZnO/Pt 100 10 DC 40/102 NA 104/RT [124]
9 Ag/La2O3/Pt 50 0.035 DC >103/>103 106 s/RT NA [295]
10 Ag/SiO2/Pt 80 0.5 DC ~35/106 ~2 × 103s/RT NA [296]
11 Ag/TaOx/Pt 65 ~100 NA NA NA NA [297]
12 Ag/ZrO2/Pt 50 5 DC >102/>102 NA ~7.5 × 103/RT [298]
13 Ag/TiO2/Pt 40 0.29 100/103 ~10/~106 104 s/RT NA [299]
  1. RT measured at room temperature, NA data not available, DC direct-current voltage sweeping mode