Fig. 1From: Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemoryTransmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) analysis. a Cross-sectional TEM image of Ni/SiN x /Si structure. b STEM image and EDS maps of distribution Ni, Si, and N. c EDS line profile of Ni/SiN x /Si structure. d EDS spectrum of SiN x layerBack to article page