Fig. 2From: Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory I-V characteristics of the Ni/Si3N4/p +-Si RRAM device. a Sharp reset transition with CC of 5 mA. b Sharp reset transition with CC of 100 μA. c Step-by-step-reset transition with CC of 100 μA. d Weak reset transition with CC of 100 μABack to article page