Fig. 8From: Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory a Multilevel I-V characteristics of the reset process for step-by-step reset switching. b Resistance value after different pulse amplitudes from −2 to −5 V are applied to the devices. Applied voltage pulse (−3 c and −5 V d) and transient current response for sharp reset switchingBack to article page