Fig. 5From: Temperature and Exciton Concentration Induced Excimer Emission of 4,4′-Bis(4′′-Triphenylsilyl) Phenyl-1,1′-Binaphthalene and Application for Sunlight-Like White Organic Light-Emitting Diodes a The architectures and b the energy diagrams of WOLEDs. The architectures of devices E and F are ITO/HAT-CN (30 nm)/NPB (10 nm)/W/O or with TCTA (10 nm)/mCP: 8 wt.% bt2Ir(acac) (10 nm)/mCP (5 nm)/AND: 5 wt.% SiBN (20 nm)/TPBi (30 nm)/Liq (1 nm)/AlBack to article page