Fig. 5
From: Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)
SEM images of cleaved samples prepared by the 60 nm Ge deposition on Si(100) a without post-growth annealing and b after the annealing at 850 °C for 60 min from the area of porous layers. c, e EDX data for the chemical composition. c Chemical composition obtained along line A in (a). d Comparison of the data obtained for the porous layer along line B in (b) and for a continuous layer, as marked in (d). e The data for the cleaved sample after the 150 nm Ge deposition on Si(100) with subsequent annealing at 1100 °C for 5 min