Fig. 3From: Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect TransistorsThe variation in 2DEG electron mobility underneath the gate area for different gate biases, at room temperature, in the fabricated AlN/GaN HFETs before, and after, SiN passivationBack to article page