Fig. 4From: Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors a Measured electron mobility (μ), b 2DEG electron density (n s), and c areal resistance (R sh) of AlN/GaN heterostucture, at room temperature, as a function of SiN thicknessBack to article page