Fig. 5From: Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors a Raman measurements of AlN/GaN heterostucture with 0, 20, and 100 nm SiN passivation. b Pulse output at V gs = 0 V with different bias points for AlN/GaN HFETs with/without SiN passivationBack to article page