Fig. 1From: Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure a Schematic view of a W/WO3/WOx/W resistive switching memory device. b TEM image shows 150 × 150 nm2 devices. c HRTEM image confirms the WO3/WOx layer. The crystalline WO3 and WOx layers with d-spacing are shown insetBack to article page