Fig. 6From: Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure a Experimental and simulated I-V in the log scale for the S1, S2, and S3 devices. b Oxygen-vacancy density (n D ) profiles show a different gap in the set and reset. Corresponding electric field distribution along the CF after c set and d resetBack to article page