Table 5 Showing selected applications of DNA-based SiNW-FET sensors
From: Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications
Capture probe (target length) | Limit of detection (LOD) | Buffer composition, ionic strength, Debye screening length | Description | Reference |
|---|---|---|---|---|
DNA (16 BP) | 10 pM | 1 SSC, 165 mM, ca. 1 nm | Electrostatically adsorbed capture probe, oxide layer removed by etching | [59] |
PNA (22 BP) | 10 fM | 0.01 SSC, 1.65 mM, 7.0 nm | Oxide layer removed by chemical etching and SiNW surface passivated with an organic film | [60] |
PNA (22 BP) | 1 fM | 0.01 SSC, 1.65 mM, 7.0 mm | Electrostatically neutral analog of DNA as a capture probe | [55] |
DNA (19 BP) | 1 fM | 0.1 PBS, 15 mM, 2.3 nm | Small size of SiNWs achieved by implementation of NW structures with triangular cross section | [61] |
DNA (24 BP) | 0.1 fM | 0.01 PBS, 1.5 mM, 7.3 nm | Triangularly shaped SiNW-FETs operated at “subthreshold” regime | [34] |
DNA (15 BP) | 0.1 fM | 0.01 PBS, 1.5 mM, 7.3 nm | Alignment of interfacial chemistry by electric field | [54] |
DNA (30 BP) | 50 aM | 0.1 PBS, 15 mM, 2.3 nm | RCA amplification | [62] |