Photoluminescence Quenching and Enhanced Optical Conductivity of P3HT-Derived Ho3+-Doped ZnO Nanostructures

Table 2 XPS core level positions of P3HT-ZnO:Ho³⁺ film before and after Ar⁺ sputtering

Core level [eV], area [%]	C 1s	O 1s		S 2p		Ho 4d
Core level [eV], area [%]	C 1s	O₂	O₁	1/2	3/2	3/2	5/2
Before Ar⁺ sputtering	284.8	532.55	530.88	165.00	163.76	165.01	163.76
Before Ar⁺ sputtering		(84.81 %)	(15.19 %)	(30.23 %)	(69.77 %)	–
After Ar⁺ sputtering	284.8	532.55	531.11	164.95	163.80	164.95	163.66
After Ar⁺ sputtering		(80.96 %)	(19.04 %)	(18.08 %)	(81.92 %)	–