Fig. 2From: Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer StructureTMR ratio depending on the p-MTJ spin valve structure and ex situ annealing temperature. (Black) p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer and (red) p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 350 and 400 °CBack to article page