Fig. 7From: Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAsGa 3d and As 3d XPS spectra of p-GaAs reference (a, b) and porous p-GaAs samples (c, d) immediately after anodization in 49 % HF solution at 2 mA/cm2 showing that only the As and O are present in detectable quantitiesBack to article page