Table 1 Chemical composition of the porous sample by XPS measurements taken at the surface
From: Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs
Name | Binding energy (eV) | FWHM (eV) | % at conc | % mass conc |
---|---|---|---|---|
O 1 s | 531,2 | 2,605 | 23,46 | 6,15 |
Ga 3d | 23,2 | 2,335 | 0,58 | 0,66 |
As 3d | 42,2 | 2,758 | 75,96 | 93,19 |