Fig. 1From: Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAsAFM images of AlGaAs surfaces after LDE with Al droplets at varied parameters. a Sample with T=605 °C, θ Al=1.4 ML, and P As≃6×10−8 Torr. b Like a but with an additional 670 °C pre-growth overheating step. c Sample with T=550 °C, fully minimized P As≃1×10−10 Torr, θ Al=1.0 ML, and no overheating. d Like c but with overheatingBack to article page