Fig. 5From: Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAsAFM images of AlGaAs surfaces after LDE with pre-growth overheating, etching at T=605 °C, and varied P As. a) P As=7.9×10−7 Torr. b) P As=2.5×10−7 Torr. c) P As=1.3×10−7 Torr. d) P As=6.1×10−8 Torr. The inset in c shows a magnification of the bimodal depth distribution with shallow (sh) and deep (dh) holesBack to article page