Table 1 Computed values obtained by simulation of impedance data by equivalent circuit analyses for PSi samples before and after modification both with potentiostatic mode (sample 1) and five CV (sample 2)
From: 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography
R sol (Ω) | C dl (μF) | n | R ct (Ω) | C p (μF) | R p (kΩ) | n p | R L (kΩ) | C L (μF) | ||
|---|---|---|---|---|---|---|---|---|---|---|
Sample 1 | Pristine PSi | 55.38 | 3.38 | 0.78 | 30.18 | 24 | 12.4 | – | ||
PSi pot. | 56.9 | 0.45 | 0.72 | 103.3 | 57 | 23.6 | 0.91 | |||
Sample 2 | pristine PSi | 55.62 | 1.90 | 0.76 | 29.6 | 11.2 | 27.4 | – | ||
PSi 5 CV | 61.13 | 0.34 | 0.81 | 146.8 | 45.9 | 1.88 | 0.77 | 45.8 | 42.5 |