Fig. 1
From: Comparison of Silicon Nanocrystals Prepared by Two Fundamentally Different Methods
Electrochemical etching. Etching chamber (a) is composed of a base with a silicon wafer, teflon insert with a platinum electrode at the top and a special anti-corrosive seal at the bottom and a fastening ring. Workplace (b) composes from two etching chambers electrically connected in a series. Solution of each chamber is permanently stirred by a teflon stirrer. Porous silicon layer on top of the etched wafers (c) and scratched powder of SiNCs (d) exhibit bright PL in yellow/orange region